# Mse 630 Fall 2010 Homework #1

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 MSE 630 Fall 2010 Homework #1 Assuming dopant atoms are uniformly distributed in a silicon crystal, how far apart are these atoms when the doping concentration is (a) 1013 cm-1, (b) 1018 cm-1, and (c) 5 x 1020 cm-1? Consider a piece of pure silicon 100 um long with a cross sectional area of 1 um2. How much current would flow through this “resistor” at room temperature in response to an applied voltage of 1 volt? Show that the minimum conductivity of a semiconductor sample occurs when b. What is the expression for the minimum conductivity? c. Is this value greatly different than the value calculated for intrinsic silicon at room temperature? When a Au atopm sits on a liattice site in a silicon crystal, it can act as either a donor or an acceptor. ED and EA levels both exist for the Au and both are close to the middle of the Si bandgap. If a small concentration of Au is placed in an N-type silicon crystal, will the Au behave as a donor or an acceptor? Explain. A silicon diode has doping concentrations on the N and P sides of ND = 1 x 1019 cm-3 and NA = 1 x 1015 cm-3. Calculate the process temperature at which each of the two sides of the diode becomes intrinsic. (Intrinsic is defined as ni = ND or NA) Due 9/16/08

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